Semiconductor device

Abstract

Abstract PURPOSE:To contrive the improvement of the characteristic of the titled device, by forming an amorphous Si light shield layer in the lower part of a semiconductor in a thin film transistor formed on a transparent substrate. CONSTITUTION:On the transparent insulation layer substrate 1, a semiconductor layer 2, a gate insulation layer 3, an insulation layer 4, an impurity high density layer 5, a gate electrode 6, and source and drain electrodes 7, 8 are provided, and accordingly a thin film transistor TFT is formed. In this TFT, the amorphous Si light shield layer 9 is formed in the lower part of the semiconductor. When the layer 9 is formed of amorphous Si, the incident light of short wavelength side than visible light is almost shielded, and accordingly it functions as an efficient incident light shield layer. Thus, the channel in the neighborhood of the boundary between layers 2 and 3 can be prevented from being photo- excited by the incident light transmitting through the substrate 1 resulting in the improvement of the TFT characteristic.

Inventors

• 👤 Akira Ishizu
• 👤 石津　顕

Bibliographic Details