Manufacture of x-ray mask

Abstract

Abstract PURPOSE:To ease conditions imposed on exposure, development and the like, by etching a metal film previously formed on the whole surface of an organic film, in converting a pattern drawn on a resist into a metal film pattern. CONSTITUTION:On an Si wafer 1, an SiN film 2, a deposit base film 3, a thick polyamide film 4 are formed. Next, Al film 36 (other metals may be empolyed) is deposited on the whole surface of the polyamide film 4 by evaporation. Then, an electron beam lithographic resist is applied to the Al film 36 to form a resist pattern 5 by exposure. With the resist pattern 5 employed as a mask, the Al film 36 is etched to form an intermediate mask 37 for etching the polyamide layer 4. Since the intermediate mask 37 is formed in this manner, it is possible to ease conditions imposed on exposure, development and the like in formation of the resist pattern by electron beam lithography.

Inventors

• 👤 Koichi Okada
• 👤 浩一 岡田
• 👤 Sotaro Edokoro
• 👤 絵所　壮太郎

Bibliographic Details