Semiconductor laser element

Abstract

Abstract PURPOSE:To simplify the manufacturing steps by burying the reverse conductive type layer to a semiconductor substrate in the bottom of a V-shaped stripe groove when the groove is opened at the substrate as an ordinary manner in case that a current narrowing buried type semiconductor element is formed and growing the reverse conductive layer on the exposed surface of the substrate. CONSTITUTION:When a V-shaped stripe groove is opened at the center of an N type InP substrate 1 and a P type InP layer 2 is grown on the overall surface which includes the groove, the layer 2 is formed only on the exposed surface of the substrate 1 and the bottom of the groove, and the side surfaces of the substrate 1 and the layer 2 are exposed on the upper side wall of the groove. Then, an N type InP clas layer 3 is grown on the layer 2 of the surface while burying the blank of the upper part of the groove, and an InGaAs active layer 4 of the similar structure is covered. Subsequently, a P type InP clad layer 5 having flat surface is covered on the overall surface 4 including the layer 4 which is formed further lower on the surface of the groove, and a P type InGaAs cap layer is covered on the overal surface. In this manner, the steps of growing crystal can be reduced as compared with the ordinary steps.

Inventors

• 👤 Tomoki Murakami
• 👤 村上　智樹

Bibliographic Details