Distributed feedback type semiconductor laser

Abstract

Abstract PURPOSE:To form the distributed feedback type semiconductor laser having an irregular periodic structure only at a minute part, by controlling a current which is injected into an injecting region, newly generating the substantial difference in refractive indexes with respect to the advancing direction of light in an active region, and shifting the phases of the incident wave and the reflected wave by utilizing said refraction difference. CONSTITUTION:An N type layer 17 is provided on a double heterostructure. Zn and the like are diffused in a region shown by the dots and a current path is formed. Electrodes 9, 10, and 11 on both end parts are provided in correspondence with said current path. Therefore, e.g., when a certain equal current I1 is flowed through the electrodes 9 and 11 and a different current I2 is flowed through the central electrode 10, the difference in carrier density occurs, and the refractive index at the central part becomes slightly different from that at both ends. When the current at the electrodes 9 and 11 at both ends and the current at the central electrode 10 are adjusted so that the phase of the light at the central part of a light emitting layer 4 is different by pi/2, the same effect as that of the irregular periodic structure is obtained.

Inventors

• 👤 Shigeyuki Akiba
• 👤 秋葉　重行
• 👤 Katsuyuki Uko
• 👤 宇高　勝之
• 👤 Kazuo Sakai
• 👤 堺　和夫
• 👤 Yuichi Matsushima
• 👤 松島　裕一

Bibliographic Details