Vapor growth method for silicon semiconductor and spacer for vapor growth

Abstract

Abstract PURPOSE:To make uniform the film thickness and eliminate the slip generation, by placing a spacer having the minimum thermal conductivity on the counter- bore at the bottom of a support, thus mounting a semiconductor substrate on this spacer. CONSTITUTION:The spot facing slightly larger than the semiconductor substrate is provided on the susceptor 1 to the depth approx. twice of the thickness of the semiconductor substrate, placing the spacer 5 therein which has the outer diameter approx. the same as the semiconductor substrate, thus mounting the semiconductor substrate on this spacer. The spacer 5 is ring-shaped with the outer diamether approx.the same as one of the semiconductor substrate being smaller than the counter-bore of the support. On the upper and lower surfaces thereof, extremely rough surfaces or small projections are provided. Thus, since the heat transfer is performed mainly by radiation with less heat by conduction, the surface of the semiconductor substrate has no unevenness of heat transmission resulting in no generation of local stress in the substrate, and no slip and bending generation.

Inventors

• 👤 Eiji Shibata
• 👤 柴田　英治

Bibliographic Details