Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a semiconductor device enabled to perform high speed action when the sides and the base of an Si region are to be isolated electrically in a porous Si oxide region obtained by oxidizing porous Si by a method wherein out of the Si region, the region coming in contact with the oxide only is made so as to have high impurity concentration. CONSTITUTION:Two groups of laminated films consisting of respectively an SiO2 film 61, an Si3N4 film 62, and a porous resist film 63 if necessary, are generated interposing an interval between them on the surface 48 of a P type Si substrate 41, and p type regions 64 of high impurity concentration are formed by diffusion, etc., in the exposed surfaces 48 making the laminated films thereof as the mask. After protons are implanted in the surfaces 48, a heat treatment is performed to form N type regions 65 coming in contact with the regions 64 posistioning under the two laminated films, the anode formation treatment is performed to the substrate 41, and a porous Si region 66 is made to be generated containing the regions 64 at the circumference of the regions 65. After then, P type impurities are introduced therein, a heat treatment is performed to make impurities to be diffused, the bases and the sides of the regions 65 are surrounded with P type layers 47 of high concentration, and then a heat treatment is performed to convert the region 66 into an oxide 43.

Inventors

• 👤 Kazuo Imai
• 👤 和雄 今井

Bibliographic Details