Luquid phase epitaxial growth device

Abstract

Abstract PURPOSE:To improve productivity by shortening the preparatory processing time for epitaxial growth by a method wherein desired gas is supplied and a spare chamber controlled at about 300 deg.C is also provided at a part of the inlet and outlet of a growth chamber applied heating control here through a gate. CONSTITUTION:A gas supply pipe 9 and a gas exhaust pipe 11 are provided at the one end section of a quartz tube 1 for epitaxial growth surrounded by temperature controllig heaters 2 and the side wall of the other end respectively and a gate 3 freely sliding up and down is also slided at the opening section of the exhaust pipe 11. Next, while sliding the gate 3 in the same way, a spare chamber 4 having a gas supply pipe 10 and a gas exhaust pipe 12 at the front end and the heel of the side wall respectivly is positioned and the first slide 8 sliding a boat 5 by penetrating a cap 6 closing the opening section and the second slide 7 sliding a substrate and a source solution reservoir are provided. Before growing an epitaxial layer on the substrate composed in this way, the temperature in the spare chamber 4 is firstly raisen at about 300 deg.C. After that, the gate 3 is opened to move the substrate or the like in the quartz tube 1.

Inventors

• 👤 Seiichi Yamada
• 👤 精一 山田
• 👤 Akihiko Sato
• 👤 昭彦 佐藤
• 👤 Yoshiharu Shigyo
• 👤 執行　義春

Bibliographic Details