Programmable read-only memory element

Abstract

Abstract PURPOSE:To realize a fine and high-density PROM with improved designing tolerance, by providing a wiring layer of the 1st material which generates heat with electric conduction and then adding the 2nd and 3rd wiring layers which are set opposite to the 1st wiring layer via an insulated film and made eutectic with the heat of the 1st wiring layer. CONSTITUTION:The 1st wiring layer 30 of polycrystal silicon is formed on an insulated film 20, and the 2nd wiring layer is provided on the layer 30 via an insulated film 40 and with a cross form. The 3rd wiring layer 60 of Al is attached onto the 2nd wiring layer with a disconnection secured on a counter part 70 with a prescribed space. When a current is supplied to the layer 30 in a program function mode, the layer 30 functions as a heating element. Thus the 2nd and 3rd wiring layers are made eutectic crystal at the part 70. As a result, an eutectic region 90 of low resistance is obtained to secure a conductive state. In such way, a fine and high-density PROM element is obtained.

Inventors

• 👤 Yukimasa Uchida
• 👤 内田　幸正

Bibliographic Details