Amorphous semiconductor film manufacturing device

Abstract

Abstract PURPOSE:To manufacture an amorphous semiconductor film with good massproductivity and reproducibility by a method wherein an oscillation electrode is provided at the outside circumference section at the outside of a quartz vacuum tank and the electrode is set in a protective tube permitting arbitrary gas atmosphere and the inside of the quartz vacuum tank is equally heated from the outside of the protective tube with the aid of a heater. CONSTITUTION:A sample holder 22 is provided in a quartz vacuum tank 21 and required gas is introduced in the tank from a gas introduction port 24. A gas exhaust port 25 is connected to a vacuum pump system and a high-frequency electric field or a DC electric field is applied to an oscillation electrode 26 to generate a plasma. The electrode 26 is set in a protective tube 27 permitting arbitrary gas atmosphere. A heater 30 for heating is provided at the outside of the tube 27 and this equally heats the tank 21 or the like.

Inventors

• 👤 Kuniharu Yamada
• 👤 邦晴 山田

Bibliographic Details