Pressure contact type semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability of a pressure contact type semiconductor device by reducing the minority carrier life time of a semiconductor element substrate directly under the periphery of a metal stamp contacted under pressure with a semiconductor element substrate smaller than the other part, thereby reducing the influence of stress concentration to electric characteristics. CONSTITUTION:The cathode side of a semiconductor element substrate 62 is contacted under pressure with a metal stamp 64 integrated with a temperature compensating plate 63. The minority carrier life time of the region A of the substrate 62 directly under the periphery of the stamp 64 is shortened, for example, by electron beam emission or the like shorter than the other part. When the substrate 62 formed by shortening only the region A directly under the periphery of the stamp 64 is employed, the life time of the minority carrier can be shortened shorter than that of the GTO element except the region A in the turn-OFF time of the GTO element of the region A.

Inventors

• 👤 Katsuhiko Takigami
• 👤 滝上　克彦
• 👤 Tsuneo Ogura
• 👤 常雄 小倉
• 👤 Shigeyuki Oe
• 👤 大江　茂幸

Bibliographic Details