Etching method

Abstract

Abstract PURPOSE:To enable isolation by using a minute quantity of insulating material with a flattened surface by a method wherein only the contour (periphery) of an insular active region to be electrically isolated from other regions is selectively etched. CONSTITUTION:A mask pattern 12 composed of SiO2 film is formed on an Si substrate 11, to be followed by the formation on the entire surface of an Si3N4 film 13. By means of the reactive sputter etching method wherein Freon works as the reactive gas, said Si3N4 film 13 is etched. By this, the Si3N4 film 13 is removed, except the part, Si3N4 film 14, positioned on the side of the SiO2 film 12. The surface of the substrate 11 is then lightly oxidated, for the formation of an SiO2 film 15. The exposed surface 16 of the substrate 11 is etched by the well-known selective etching method.

Inventors

• 👤 Tokuo Kure
• 👤 久礼　得男
• 👤 Yoichi Tamaoki
• 👤 玉置　洋一
• 👤 Takeo Shiba
• 👤 健夫 芝

Bibliographic Details