Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To obtain a wiring structure having a low impedance by forming the first wiring electrode contacted directly with a low specific resistance region formed on a semi-insulating semiconductor substrate and an insulating layer, and employing as a bypass condenser of the second wiring electrode the capacity of the insulating film between the low specific resistance region and the second wiring electrode. CONSTITUTION:An N<+> type region 2 having a low specific resistance is formed on a semi-insulating semiconductor substrate 1 made of Gallium arsenide (GaAs) or the like is formed, the first wiring electrode 3 made of gold germanium/gold contacted directly with part of the upper surface of the region 2 is formed, an insulating film 4 made of silicon dioxide (SiO2) or the like which covers the electrode 3 and the region 2 are formed, and one or two second titanium/platinum/ gold wiring electrode 5 or 5a, 6b are formed adjacent to the electrode 3 on the film 4. When the electrode 3 is contacted with the ground G and desired drive sources B, Ba, Bb are connected to the second wirings 5, 5a, 5b, the dielectric constant of the insulating film and capacities C, Ca, Cb matched to the thicknesses are formed between the regions 2 and the wirings 5, 5a, 5b, which are grounded with the bypass capacitor, thereby decreasing the impedance.

Inventors

• 👤 Katsuhiko Suyama
• 👤 須山　勝彦

Bibliographic Details