Polishing dish and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a polishing dish having high anti-wear property and good quality, by a method wherein a metal layer is formed on the surface of an insulator by vapor deposition in a dilute gas atmosphere under a high frequency electric field and a polishing layer comprising a silicon oxide layer is formed on the surface thereof by vapor deposition. CONSTITUTION:After the inside of a vacuum chamber 12 is evacuated to form a dilute gas atmosphere with a vacuum degree of about 8X10<-5>Torr, a metal 13 such as Cr is evaporated by heating the same by an electron beam heating gun 17. The resulting vapor stream of the metal 13 raised to a direction shown by an arrow is ionized by a high frequency electric field with available power of 2,000W and frequency of 13.56MHz applied to a high frequency coil 19 and deposited on the surface 20a to be vapor deposited of an insulator to form a metal layer 22 with a chickness of about 5,000Angstrom . In the next stage, a silicon oxide compound 15 is heated and evaporated by an electron beam heating gun 18 to deposit the vapor of the silicon oxide compound on the surface of the aforementioned metal layer 22 to obtain a polishing dish having a polishing layer 23 with a thickness of about 5,000Angstrom comprising the silicon oxide compound formed on the surface of the metal layer 22.

Inventors

• 👤 Shunsuke Horiyasu
• 👤 堀安　俊介
• 👤 Ryoichi Endo
• 👤 遠藤　良一
• 👤 Takashi Nishiguchi
• 👤 西口　隆
• 👤 Kikuo Koga
• 👤 古賀　喜久雄

Bibliographic Details