Microprocessing method

Abstract

Abstract PURPOSE:To reduce fog caused by the back scattering of an electron beam and to form a high-accuracy minute pattern by a method wherein a high-density conductive film is formed on a processed body and a sensitive electron resist is formed on the film. CONSTITUTION:A high-density conductive film 13 controlling the penetration of electrons is formed on a processed body 12 and a sensitive electron resist 14 is formed on the film 13. Next, the resist 14 is exposed with a desired pattern and developed by using electron beams accelerated at 7-15keV. Dry etching is applied to the film 13 by using the resist 14 as a mask and then, dry etching is applied to the processed body 12 by using the film 13 as a mask. Therefore, the back scattering of an electron beam can extremely be reduced and sufficient exposure is also applied to the resist. Therefore, a decrease in resolving power caused by back scattering can be prevented and a pattern with a thickness of several mum or less can be formed with high accuracy.

Inventors

• 👤 Katsuhiro Kawabuchi
• 👤 川「淵」　勝弘

Bibliographic Details