Semiconductor light sensitive element

Abstract

Abstract PURPOSE:To obtain a light sensitive element having good characeristic by stacking an n type InP, n<-> type InP on the n type InGaAsR or InGaAs of substrate and surrounding the P<+> type light sensitive region in the N<-> type InP with the Be ion-implanted layer. CONSTITUTION:An n and n<-> InP 12, 13 are stacked on an n<+> type InP/InGaAs substrate 11, and a buffer and light absorbing layer are epitaxially formed in succession. A window 14A is opened on an SiO2 14 formed by the sputtering method using a resist mask 14', Be ions are implanted thereto and a p type protection ring 15 is formed. The films 14', 14 are removed and the surface is covered with the PSG 16 and then annealed. the film 16' is removed and the surface is covered with an Si3N4 16 formed by CVD method, a window 16A is opened, Cd is thermally diffused and thereby a p<+> type light sensitive layer 17 is formed. Thereafter, the film 16 is removed and a protection film 18, electodes 19, 20 are provided. According to this structure, the inclined junction can be obtained in the ion implanting direction, drop of breakdown voltage by the lateral step-wise junction can be compensated by the periphery due to formation of the n<-> type InP layer and thereby a light sensitive element having a protection ring with an excellent characteristic can be obtained.

Inventors

• 👤 Tatsuaki Shirai
• 👤 達哲 白井
• 👤 Takao Kaneda
• 👤 隆夫 金田

Bibliographic Details