Plasma etching device

Abstract

Abstract PURPOSE:To improve discharge efficiency, by providing permanent magnets under a high frequency power impressed cathode, and generating the magnetic field orthogonal to the magnetic field due to the high frequency power resulting in the promotion of the collision-dissociation of electrons and gas molecules. CONSTITUTION:An anode is mounted to the longitudinal opening of a reaction vessel 8, the cathodes is arranged opposed thereto, and the material to be etched 6 is loaded thereon. According to the quality of the material to be etched 6, the gas of CHF3/H2 or Cl2, etc. is introduced from an inlet 7 into the vessel 8 and exhausted from an exhaust system 10, and simultaneously the high frequency power 3 is impressed on the cathode 5 via a matching circuit 2 resulting in the generation of glow discharge 14 in the vessel 8. In this constitution, a closed circuit constituted of permanent magnets 1-a, 1-b, 1-c is provided on the lower surface of the cathode 5, the magnetic field due to magnets is made orthogonal to the electric field generated on the electrode 5, and the generated plasma is condensed by a ring-shaped insulator provided on the material to be etched 6 resulting in the generation of stronger plasma.

Inventors

• 👤 Takashi Yamazaki
• 👤 隆 山崎
• 👤 Haruo Okano
• 👤 晴雄 岡野
• 👤 Yasuhiro Horiike
• 👤 靖浩 堀池

Bibliographic Details