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JPS5852864A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor integrated circuit device

Assignee: Seiko Epson Corp
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Filing: 1981-09-24
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Granted: —
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Expires: 2001-09-24
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Abstract

Abstract PURPOSE:To bond a large number of IC chips at the same time, and to eliminate the need for forming a bump onto the IC ship by electrically connecting the IC chip onto a transparent substrate by using a photosensitive material having electric conductivity when the IC chip is bonded onto the substate. CONSTITUTION:Wiring 12 by metallic layers is formed onto the transparent substate consisting of a glass plate, a quartz plate or the like, and the layer of the photosensitive material having electric condutivity is shaped onto the whole surface of the transparent substrate. The material may be photosensitive organic resin (a resist) containing conductive resin, or may be photosensitive organic resin into which the particulates of a metal or carbon are dispersed. The layer is formed onto the transparent substrate by the organic resin, the IC chip 14 is pushed onto the surface of the organic resin under the state of face- down, and the IC chip is bonded. When beams 15 are irradiated onto the whole surface from the back of the transparent substrate 11, the resin layer except the upper section on the wiring on the transparent substrate is removed in the next development process. The resin layer is cured, and the IC chip is bonded completely.

Inventors

  • 👤 Koichi Oguchi
  • 👤 小口 幸一

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 08:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W90/00; H10W90/701; H10W90/721; H10W90/724

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