Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent concentration of stress to a silicon pellet, and to prevent destruction thereof by a method wherein an adhesion reinforcing film having favorable wetness with low melting point glass, and moreover having large adhesion intensity has been formed previously on the back of the silicon pellet. CONSTITUTION:A base assembly consisting of a ceramic substrate 1, low melting point glass films 2, 3 is heated up to the working temperature of low melting point glass of 400-450 deg.C to make the low melting point glass film 2 to be in softened condition, a semiconductor element 4 provided with the Al evaporation film 5 on the back is positioned on the pellet attaching face thereof, and weighting of about 4g/cm<2> is applied thereto. Low melting point glass 2 and the Al evaporation film 5 are wetted mutually to be adhered in condition thereof, and by cooling for the prescribed hours as to be firmly joined mutually, mounted adhesion of the semiconductor element 4 on the pellet attaching face is completed. The semiconductor element can be mounted surely and firmly without generating destruction, and because the precious metal of a high cost is not used, the cost of the semiconductor device can be reduced remarkably.

Inventors

• 👤 Eiji Yamamoto
• 👤 英治 山本
• 👤 Hiroshi Tsuneno
• 👤 常野　宏

Bibliographic Details