Preparation of silicon carbide whisker

Abstract

Abstract PURPOSE:To prepare high-quality silicon carbide whisker in high yield industrially, by packing a porcelain pipe with carbon powder having a specific bulk density, inserting the pipe into an outer pipe, feeding a mixed gas of silicon tetrachloride and hydrogen to it while heating it at a specific temperature. CONSTITUTION:The porcelain or graphite pipe 1 is uniformly packed with carbon powder such as active carbon having a bulk density of <=0.1g/cc. The pipe is inserted into the outer pipe 2, heated at least at 1,300 deg.C, preferably 1,450 deg.C, by the electric furnace 3 while an Ar gas is introduced from the end 4 to it, and a mixed gas of silicon tetrachloride and hydrogen is fed to the pipe. The mixed gas has >=about 10mol hydrogen based on 1mol silicon tetrachloride, >= about 2mol silicon tetrachloride, >= about 20mol hydrogen based on 1mol carbon, the flow rate of the mixed gas is about 3-30cm/min, and the reaction time is about 3hr. Consequently, silicon carbide whisker is prepared in a yield of about 30-80% based on carbon powder as a base.

Inventors

• 👤 Yasuo Hihashi
• 👤 樋端　保夫
• 👤 Nobuyuki Tamatoshi
• 👤 玉利　信幸
• 👤 Toru Ogura
• 👤 透 小倉
• 👤 Hideshi Asoshina
• 👤 阿蘇品　英志

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