Semiconductor device

Abstract

Abstract PURPOSE:To obtain uniform active semiconductor layers by forming the active semiconductor layers constituting two field effect transistors by the same semiconductors with the same thickness and the same impurity concentration. CONSTITUTION:The active semiconductor layer 1A which constitutes the field effect transistor 8A and the active semiconductor layer 1B which constitutes the field effect transistor 11B are formed by the same semiconductors under the conditions with the same thickness, the same impurity concentration, and the like. However, the gate electrode 6A of the field effect transistor 8A and the gate electrode 6B of the field effect transistor 11B are made of different gate electrode materials. A Schottky junciton 7A is formed between the gate electrode 6A and the active semiconductor layer 1A, and a homogenious P-N junction 10B is formed between the gate electrode 9B and the active semiconductor layer 1B. Therefore, the Schottky junction 7A and the homogeneous P-N junction 10B have the different heights of barriers. Thus the field effect transistors 8A and 11B have different pinchoff voltages.

Inventors

• 👤 Yasunobu Ishii
• 👤 康信 石井

Bibliographic Details