Compound dry etching device

Abstract

Abstract PURPOSE:To individually or simultaneously perform isotropic etching and anisotropic etching in the same reaction chamber for a processed substance by a method wherein coaxial type electrodes and parallel flat-plate type electrodes are arranged in the same reaction chamber. CONSTITUTION:A processed substance 5 to be etched which is arranged on the surface of a flat plate electrode 6 and a facing electrode 7 facing to the electrode 6 and arranged in almost parallel with the electrode 6 are arranged at the near center at the inside of shield electrodes 4 and the electrodes 6, 7 are connected to a high-frequency power source A respoctively. The faces of the electrodes 6, 7, coaxial electrodes 1, 2, and the faces of the shield electrodes 4 become vertical. A high frequency is applied across the electrodes 1, 2 and when the electrodes 6, 7 are grounded or maintained at floating potential, etching is isotopically proceeds. On the contrary, with the electrodes 1, 2 grounded or maintained at floating potential, and with a high frequency applied to the electrodes 6, 7 ion sheath is formed around the processed substance 5 and an ion vertically reaches against the processed substance 5. Therefore, anisotropic etching can be performed.

Inventors

• 👤 Hiroshi Ikejima
• 👤 寛 池島

Bibliographic Details