Semiconductor device

Abstract

Abstract PURPOSE:To obtain a laser diode of double hetero structure remarkably improved cut off frequency and having no unstableness of output and gain in terms of time by a method wherein a semiinsulative GaAlAs layer doped oxygen is epitaxially grown on a semiinsulative GaAs or GaAlAs substrate and an operating layer is stacked on the semiinsulating GaAlAs layer for epitaxial growth. CONSTITUTION:A Ga0.7Al0.3As buffer layer 22 is epitaxially grown while implanting O2 dopant gas on a substrate 21 such as semiinsulative GaAs or GaAl As and then, implantation of AsCl2 gas and O2 dopant gas is stopped and an operating layer 23 is epitaxially grown while implanting sulphur dopant gas. Next, a semiinsulative GaAlAs layer 24 for surface passivation film is grown on the layer 23 under the same condition for the growth of the layer 22 and after forming a predetermined pattern, a gate electrode 5 is provided on the layer 23 while surrounding the gate electrode 5 with the layer 24 and a source electrode 4 and a drain electrode 6 contacting the layer 23 are coated around the layer 24. After that, the whole surface is coated with an SiO2 protective film 7.

Inventors

• 👤 Akihiro Shibatomi
• 👤 昭洋 柴富
• 👤 Kenya Nakai
• 👤 中井　建弥
• 👤 Kazumi Kasai
• 👤 和美 河西

Bibliographic Details