Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve crystallization and to obtain a transistor operating at high speed by a method wherein an O2 doped semiinsulative GaAlAs layer is epitaxially grown on a GaAs substrate when a field effect transistor is manufactured and the layer is activated to form an operating layer after implanting ions into a predetermined region. CONSTITUTION:A laser diode 12 of double hetero structure is formed on an N<+>type GaAs substrate 11 and an O2 doped semiinsulative GaAlAs layer 13 is epitaxially grown ranging from both sides of the laser diode 12 to the substrate 11. Next, an SiO2 film 14 is coated on the whole surface including the diode 12 and predetermined openings are perforated and after forming an N<+>type source and a drain region 18 in the exposed layer 13 by ion implantation, heat treatment is applied to activate the source and the drain regions. After that, ohmic electrodes 16 are installed at the source and the drain regions and a high-milting point gate metal 15 consisting of Ti and W is coated on a channel region 17 located between the source and the drain regions.

Inventors

• 👤 Akihiro Shibatomi
• 👤 昭洋 柴富
• 👤 Kenya Nakai
• 👤 中井　建弥
• 👤 Kazumi Kasai
• 👤 和美 河西

Bibliographic Details