Cap for semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To completely seal a semiconductor device by glazing sealing glass in two layers on a cap formed of a material having high flatness and selecting the working temperature of the layer of the cap side at the temperature higher than the other layer. CONSTITUTION:A glass having higher working temperature than the crystallized glass or glass 9 of the second layer is printed on sealing glass 8 at the cap 5 side, and is baked at a temperature higher than the working temperature. The crystallized glass is crystallized by this treatment, and the amorphous glass is completely glazed on the cap. It is baked at a temperature lower than the working temperature of the glass of the second layer and is glazed on the glass layer 8 thus completely glazed. Then, to seal the device with the cap, it is performed at the working temperature of the layer 9. At this time, the working temperature of the layer 8 is high. Accordingly, the glass at the boundary between the cap and the sealing glass is not forcibly flowed during the sealing work, thereby sealing in high reliability.

Inventors

• 👤 Kazuo Okano
• 👤 岡野　一雄

Bibliographic Details