Manufacture of thin film sensor element by chemical vapor deposition method

Abstract

Abstract PURPOSE:To obtain thin film sensors having a fine and uniform structure with less operation by a method wherein gaseous complexes generated from individual material complexes are mixed together in transit and reacted with steam to form an oxide thin film on a substrate. CONSTITUTION:Vapor of an organometallic compd. mainly composed of a beta- diketone complex or a metal alkoxide is mixed with oxygen-contg. steam or oxygen required for oxidation by a chemical vapor deposition process. Then, a single or double oxide thin film obtained by heating is coated with an electrode. In this manner, a thin film sensor having a fine and uniform structure can be obtained with less operation. This also enables the preparation of the element in the open atmosphere thereby facilitating mass production.

Inventors

• 👤 Kiichiro Kamata
• 👤 鎌田　喜一郎

Bibliographic Details