Manufacturing device for plasma semiconductor

Abstract

Abstract PURPOSE:To contrive the improvement of productivity by providing a means for varying electric field intensity distribution at the diameter direction of round electrodes facing to each other. CONSTITUTION:A reaction chamber 6 is evacuated from exhaust ports 7. An upper electrode having three ring electrodes 2-1, 2-2, 2-3 and a lower electrode 5 are arranged in the reaction chamber. The upper electrode and the lower electrode 5 are faced and placed in parallel with each other. Reaction gas introduced from a gas nozzle 3 reduces its reaction speed as the reaction gas is going down to the circumference of the lower electrode 5. Therefore, the gradient of plasma intensity is given in the reverse direction to reaction gas density by adjusting the gap between the high frequency power of the inner ring electrode 2-1, center ring electrode 2-2, and the outer ring electrode 2-3 and the lower electrode.

Inventors

• 👤 Yasuo Narutomi
• 👤 成富　康夫
• 👤 Yoji Nishimura
• 👤 西村　陽二

Bibliographic Details