Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To remove the lattice defect of the titled device by a method wherein the distortion generated due to the difference in the coefficient of thermal expansion between the silicon substrate and the oxide film at the circumferential part of the silicon oxide film is reduced. CONSTITUTION:After ions are implanted, the silicon oxide film 2 located on the whole surface of the silicon substrate 1 is removed, a new silicon oxide film 5 is grown in vapor-phase on the whole surface of the silicon substrate 1, and then the above is annealed by performing heat treatment at 1,000 deg.C in a nitrogenous or oxygenous atmosphere for thirty minutes. In this case, as the annealing is performed in the state wherein no aperture is provided on the silicon oxide film, the thermal distortion which will be generated in the vicinity of the aperture can be prevented, thereby enabling to sharply reduce a leakage current.

Inventors

• 👤 Masahiko Nakatsuka
• 👤 中塚　正彦

Bibliographic Details