Chemical vapor growth method

Abstract

Abstract PURPOSE:To prevent the growth of a heterogeneous film at growth initiation, by introducing oxygen into a reactor at a predetermined time prior to introducing monosilane thereinto when chemical upon growth of a film is initated. CONSTITUTION:In a chemical vapor growth method for causing growth of a glass film by introducing monosilane and oxygen into a reactor 10 having a substrate 12 to be treated being enclosed therein, when the growth of the glass film is initiated, oxygen is introduced into the reactor 10 at a predetermined time prior to introducing monosilane into said reactor 10. By this method, the formation and growth of a heterogeneous film due to the shortage of oxygen can be prevented.

Inventors

• 👤 Masumi Ikeda
• 👤 池田　益已
• 👤 Osamu Anzai
• 👤 安斉　修

Bibliographic Details