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JPS5833832A Expired / Lapsed JP ⏱️ 0.0 years remaining

Heating process

Assignee: Fujitsu Ltd
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Filing: 1981-08-25
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Granted: —
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Expires: 2001-08-25
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Abstract

Abstract PURPOSE:To attain high activation efficiency without giving any damage on the surface by gradually increasing irradiation intensity and then gradually decreasing it in the light irradiation annealing method. CONSTITUTION:The maximum irradiation intensity per unit area is kept at almost the constant value about 5X10<4>W/cm<2>, and the ascending and descending times of irradiation energy density are respectively changed from 200musec to 1,000musec for experiments. Thereby, the light irradiation annealing method assuring a high activation coefficient without accompanying generation of crystal defect can be realized at the respective ascending and descending time of irradiation energy density of 400musec or more.

Inventors

  • 👤 Toshihiko Fukuyama
  • 👤 福山 敏彦
  • 👤 Takashi Yahano
  • 👤 矢羽野 俊

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-30 04:37
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20

Claims Analysis

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References Cited (Backward Citations)

JPS5681928A Cited

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