Semiconductor device

Abstract

Abstract PURPOSE:To simplify the producing steps with a simple pattern and to increase the density of a semiconductor device by burying line segments for coupling perpendicularly between columnar source, drain and a pair of gates in a substrate. CONSTITUTION:A line segment for coupling between a source 11 and a drain 12 and a line segment for coupling between a pair of gates 13 and 13' are perpendicularly crossed and disposed. They are all formed columnarly, and buried from the surface of a silicon substrate 1 with one end of the columnar unit directed downwardly. The structure is formed, for example, that the source 11 and the drain 12 are formed with cup-shaped n<+> type regions 14, 14' and n<+> silicon polycrystalline unit 15, 15' filled therein. The shapes of the columnar source 11, drain 12 and gates 13, 13' may be formed without corners so as not to produce the concentration of the electric field, such as an elliptical shape in section.

Inventors

• 👤 Yuji Furumura
• 👤 雄二 古村

Bibliographic Details