JPS583288A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of double diffusion type mos semiconductor device
Assignee: Toshiba Corp
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Filing: 1981-06-30
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Granted: —
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Expires: 2001-06-30
Abstract
Abstract Translated from Japanese (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Inventors
- 👤 Seiji Yasuda
- 👤 聖治 安田
- 👤 Toshio Yonezawa
- 👤 敏夫 米沢
- 👤 Shunichi Kai
- 👤 開 俊一
- 👤 Jiro Oshima
- 👤 次郎 大島
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-27 13:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/17; H10D62/393; H10D62/80; H10D62/83; H10D62/834
Claims Analysis
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References Cited (Backward Citations)
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