Manufacture of vertical buried capacitor

Abstract

Abstract PURPOSE:To improve the integration of a capacitor by forming a dielectric layer by an ion beam etching on a region to be formed with a capacitor of the groove hole formed on a semiconductor substrate and two conductive thin layers by an electroless plating method as a capacitor. CONSTITUTION:Grooves holes 3 are formed by vertical ion beam etching on an Si substrate 1, and a dielectric layer 4 is formed on the region to be formed with a capacitor of the holes. Further, an Ni conductive thin layer 5 and an aluminum conductive thin layer 6 are formed by electroless plating method thereon, and a capacitor is formed with the layers 5, 6 and the substrate 1 via the layer 4. In this manner, the capacitor can be formed stereoscopically, thereby raising the integration.

Inventors

• 👤 Yuji Furumura
• 👤 雄二 古村
• 👤 Mikio Takagi
• 👤 幹夫 高木
• 👤 Mamoru Maeda
• 👤 守 前田
• 👤 Kenji Koyama
• 👤 小山　堅二

Bibliographic Details