Compound semiconductor element and forming method of its electrode

Abstract

Abstract PURPOSE:To obtain the electrode with good reproducibility, when the electrode is provided in the semiconductor including Al, by forming the three layer structure of the electrode comprising a Ti layer which is provided on the substrate, a layer including Sn and an ohmic contacting metal, and an Au layer. CONSTITUTION:On the P type GaAlAs substrate 1, a P type GaAlAs region 2 and an N type GaAlAs region 3 are laminated and grown by a liquid phase epitaxial method. At first, the Ti layer 7, which is to become a protecting film at the time of etching is deposited on the region 3. Then the metal layer 8 comprising Sn, Ge, and Ni which can obtain the excellent ohmic contact with respect to the region 3, and the Au layer 9 which is readily bonded are laminated and deposited on the Ti layer 7. Thereafter, a light sensitive film 10 having a fine precise pattern is provided on the layer 9. The exposed part of the layer 9 and the layer 8 are etched away by using a mixed liquid of KI-I2. Then the layer 7 is etched by using an HF series solution, the film 10 is removed, and the three layer structure comprising the layers 7, 8, and 9 is obtained. Thereafter, an electrode 5 such as Au-Zn is deposited on the back surface of the substrate 1, and the heat treatment is performed for the entire element.

Inventors

• 👤 Masaaki Sakata
• 👤 雅昭 坂田

Bibliographic Details