Measuring device for characteristics of transistor

Abstract

Abstract PURPOSE:To measure accurately the re value even for a region where a flyback phenomenon is caused, by applying the voltage of a pulse waveform having different heights is applied between the base and the emitter of a transistor to be measured and deriving the IB-VCE characteristics. CONSTITUTION:The circuits 20 and 30 are connected to a transistor TR10 to be measured, and a variable power supply 21 and a resistance R22 are provided to the circuit 20. Then the voltage of the direction where a collector current is flowed is applied between the collector and the emitter of the TR10. At the same time, a power supply 31 and an R32 are provided to the circuit 30, and the voltage of the direction where the base current is flowed is applied between the base and the emitter of the TR10. This voltage to be applied is turned into a pulse waveform that has different heights and a sudden rise. In such way, the collector-emitter voltage VCE and the base current IB are measured by the measuring means 40 and 50. Thus the accurate transistor parameter re value can be derived even in a region where a flyback phenomenon is caused.

Inventors

• 👤 Shigeaki Tomonari
• 👤 恵昭 友成

Bibliographic Details