Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of thin film cracks without tapering on stepwise differences, by forming a thin film on a surface with stepwise differences by a rotation applying method for etching over the entire surface by dry etching. CONSTITUTION:An oxide film 12 is formed on the surface of an Si substrate 11 by a thermal oxidation method successively to form a resist 13. Next, a resist pattern is formed by a photo exposure method for patterning the oxide film 12 by a reactive ion etching method with CF4 and H2 for reaction gases to form steep stepwise differences. Then, a resist film 14 is formed by a rotation applying method. Next, after high temperature treatment, plasma etching is applied by a chemical dry etching device with CF4 and O2 for reaction gases. Thereafter, the resist 14 is removed by mixed solution of hydrogen peroxidic water and sulfuric acid further to form an Al film 15 by a sputter evaporation method.

Inventors

• 👤 Katsuhiro Kawabuchi
• 👤 川「淵」　勝弘

Bibliographic Details