Semiconductor device

Abstract

Abstract PURPOSE:To improve heat-dissipating characteristics and to cope with expansion and contraction due to the heat of a semiconductor element, also by connecting a section between a heat-transfer plate being joined with the semiconductor element face-down bonded and a heat dissipator by a flexible heat-transfer wire group. CONSTITUTION:The large part of heat generated from the semiconductor element 2 fixed by face-down bonding electrodes 2a to a substrate 1 are transmitted to the flexible heat-transfer wire group 11 from the heat transfer plate 9 and to a radiator fin 8 from a radiator plate 10, and discharged to the outside of the device. The expansion and contraction of the semiconductor element 2 and the heat-transfer plate 9 and the like due to heat generated from the semiconductor element 2 are absorbed by a stress absorption effect of the flexible heat-transfer wire group 11, and have no adverse effect on the semiconductor device.

Inventors

• 👤 Hiroshi Shibata
• 👤 浩 柴田

Bibliographic Details