semiconductor equipment

Abstract

Abstract PURPOSE:To improve the high frequency characteristics of a semiconductor device by forming a contacting part of a molybdenum layer and an aluminum layer directly under a wiring terminal, thereby reducing the contacting resistance of molybdenum and aluminum. CONSTITUTION:An Mo layer 3 is formed through a thin gate insulating film 2 on an Si substrate 1. Part of the layer 3 is extended as Mo wirings on a thick insulating film 4, and a wiring terminal is widely formed. An aluminum layer 8 is contacted through a through hole 6 of large diameter of the second insulating film (phosphorus silicate glass or the like) thereon, and Au wirings 9 are bonded as a bonding pad. The Au and the Mo are approached or contacted through the aluminum layer by the bonding of the Au wirings 9, thereby reducing the contacting resistance.

Inventors

• 👤 Kenji Yoshinaga
• 👤 吉永　賢爾

Bibliographic Details