Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to attain anodic formation, and to enable to form a narrow isolation region by a method wherein holes are injected into a high resistance region from a P type region. CONSTITUTION:A Bi substrate 1 is consisting of the P type substrate 10 connected with a positive electrode, the high resistance region 11 adjoining the p type substrate 10 and a mask layer 5. The high resistance region is the N type, holes are injected from the P type substrate 10 according to a formation electric power source 4, and flow toward the opening part of the mask layer (mainly a nitride film) 5. Namely, holes concentrate to the high resistance layer 13 in the neighborhood of the opening part of the mask, and react on the surface. At this case, thickness of the high resistance layer is the maximum diffusion distance of holes, it is desirable to be thinner moreover, and width of the depletion layer of diffusion electric potential or less is desirable. It is because density of holes is higher moreover. Accordingly, the porous film 20 is formed having the boundary face nearly perpendicular to the current course of holes.

Inventors

• 👤 Masafumi Shinpo
• 👤 新保　雅文
• 👤 Hiroshi Imai
• 👤 宏 今井

Bibliographic Details