Method for growing crystal by molecular beam

Abstract

Abstract PURPOSE:To obtain an epitaxial crystal having high quality in the stage growing the crystal of molecular beam on a substrate to be treated, by performing said operation in a vacuum atmosphere contg. reducing gaseous ions or an active reducing gas. CONSTITUTION:Gaseous H2 8 is supplied through a small hole into an ionization chamber 5, and the degree of vacuum is controlled to about 10<-3>Torr H2 pressure. A high-frequency electric field is applied between discharge electrodes 6 to induce glow discharge, and a magnetic field is applied in a right angle direction by an electromagnet 7 to confine the plasma near the electrodes 6. The gas contg. many H ions is supplied through a needle valve 9 to a chamber 1 kept under a high vacuum, and is caused to react with remaining gases such as O2, CO2 and CO. The adsorption of impurity atoms on the crystal growth surface is thus prevented in the stage of growing a thin crystal layer on the substrate to be treated by evaporating the component molecules constituting the crystal from the molecular beam source in the chamber 1.

Inventors

• 👤 Kazuhiro Kondo
• 👤 和博 近藤

Bibliographic Details