Epitaxial growth method

Abstract

Abstract PURPOSE:To form an epitaxial growth film having high accuracy of thin film without auto doping, by a method wherein lamp light is irradiated from the surface of a polycrystalline or amorphous film formed on a single crystal substrate and therefore a single crystal film is formed. CONSTITUTION:A polycrystalline Si layer 2 is grown on an Si single crystal substrate 1 by putting the Si single crystal substrate 1 in a furnace of vacuum being about 10<-3>mm.Hg and introducing SiH2Cl2 (dichloro silane) glass into the furnace. Then an SiO2 film 3 is formed by chemical vapor deposition method and a halogen lamp 5 irradiates light ray 7 from one direction 6 or from the whole surface, thereby the polycrystalline Si film 2 is transformed into a single crystal Si film 4. In this constitution, heating is performed by the lamp 5 so that the surface temperature becomes 1,200-1,400 deg.C.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details