Photovoltaic device

Abstract

Abstract PURPOSE:To prevent the short-circuit of the elements as well as to incerase the yield rate of production for the title device by a method wherein an insulating layer, having almost the same thickness as that of the first layer which is located on both sides of the substrate of the elements, is provided in such a manner that it will be located between the p-n junction elements which constitute the photovoltaic device. CONSTITUTION:A semiconductor layer 7, which functions as a transparent electrode layer or a combined electrode and window material, is formed in narrow-stripped pattern shape on a glass substrate 6 and an insulating layer 8, consisting of insulating magerial and having almost the same thickness as that of the layer 7, is buried in the gap located between the above patterns. Subsequently, p-n junctions is generated by providing an N-type semiconductor 9, a p type semi-conductor layer 10 and the like on the layer 7 by performing the method commonly in use, the p-n junctions are connected in series using the metal electrode layer 11 which was provided along the layer 8, and the photovoltaic device is obtained. Through these procedures, no short-circuit and the like of the elements is generated due to the existence of the layer 8, the oozing and the sagging generated on the substrate 6 are disappeared from the surface, and a better external appearance can be obtained for the titled device.

Inventors

• 👤 Hiroshi Uda
• 👤 宇田　宏
• 👤 Hitoshi Matsumoto
• 👤 仁 松本
• 👤 Nobuo Nakayama
• 👤 中山　信男
• 👤 Akihiko Nakano
• 👤 明彦 中野
• 👤 Seiji Ikegami
• 👤 池上　清治

Bibliographic Details