Semiconductor device

Abstract

Abstract PURPOSE:To perform a higher speed cutting, by a method wherein in a memory adapted to program by cutting a wiring constituting an IC, a wiring made of Mo or W is formed on a semiconductor resistance layer independent of the IC, and the cut part of the wiring is oxidized and sublimated by supplizing electricity to a resistance layer. CONSTITUTION:A wiring 11 constituting a PROM is made using a material which is easily oxidized and sublimated, such as Mo or W. The part to be cut is set to be less than 1mum thick and about 2mum wide, which is defined as a fuse part 12. Then, this is arranged on the heater part composed of a polycrystalline Si layer 15 independent of an IC constituting the PROM though a SiO2 film 14 and is covered with such a protection film as PSG. A window 13 is opened corresponding to the fuse part 15. After that, current is supplied to the layer 15 in an O2 atmosphere or in the air, and the fuse part 12 exposed to the window 13 is rapidly oxidized and sublimated by self heating. Thus the material of the wiring 11 will not be dispersed and no short circuit will be caused.

Inventors

• 👤 Takashi Iwai
• 👤 崇 岩井
• 👤 Tatsuyuki Ichinose
• 👤 一瀬　龍之
• 👤 Noriaki Sato
• 👤 佐藤　典章
• 👤 Hitoshi Hasegawa
• 👤 長谷川　斉

Bibliographic Details