Semiconductor device

Abstract

Abstract PURPOSE:To prevent disconnection of wires at the opening step portions, by producing insulation films between layers through the deposition of both Si3N4 and Si3N4 with a higher etching speed than the former on an Si substrate by means of the plasma vapor growth. CONSTITUTION:A field oxide film 102 and an active region 103 are formed on an Si substrate 101, and Al wiring 105 is provided on PSG 104 by opening the PSG. Using the plasma vapor growth, Si3N4 106 is then formed, on which is formed Si3N4 107 having a larger formation ratio of N to provide the etching speed to a CF4 plasma five times that of the Si3N4 106. The second Si3N4 film 107 can be identified by verifying that its refractive index to a red light of 6328A is less than 2. After the isotropic etching of films 107 and 106 to a depth of approximately 1mum by the CF4 plasma using a resist mask 108, the anisotropic etching is applied to the films to form slanted opening sides. The resist mask 108 is then removed and an Al wiring 109 is bonded to connect with a wiring 105. This constitution can form ICs with no disconnection of wires since these two silicon nitride films require formation and etching only once each.

Inventors

• 👤 Shigeru Murakami
• 👤 茂 村上
• 👤 Osamu Kudo
• 👤 修 工藤

Bibliographic Details