← Back to Patent Explorer
JPS5814535A Expired / Lapsed JP ⏱️ 0.0 years remaining

Purifying method for wafer

Assignee: Fujitsu Ltd
•
Filing: 1981-07-17
•
Granted: —
•
Expires: 2001-07-17
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract PURPOSE:To easily separate and remove unnecessary substances adhering to a wafer therefrom the charging them with electrons by plasma discharge. CONSTITUTION:A wafer 1 to which dust 2 adheres is placed on an electrode 4 coated with an insulator 5. Ar is introduced into a vessel 10 and exhausted therefrom, and plasma discharge is generated between the electrode 4 and an electrode 3 by a high-frequency power source 7. Then the dust 2 is charged with electrons. Next, when negative voltage is applied to the electrode 4 by a DC power source 9, the dust 2 is separated from the wafer 1, and thus the dust, which has been hard to remove in the conventional method, can be removed with ease.

Inventors

  • 👤 Naomichi Abe
  • 👤 阿部 直道
  • 👤 Moritaka Nakamura
  • 👤 守孝 中村

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 16:26
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12

Claims Analysis

Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.

References Cited (Backward Citations)

JPS53124445A Cited
JPS5384563A Cited

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag