Schottky gate field-effect transistor and its manufacture

Abstract

Abstract PURPOSE:To enable minute processing by constituting an operating layer in a manner that the surface is flat and the number of carriers per unit area of the operating layer between source-drain is made larger than that of the carriers of the operating layer just under a gate and preparing the constitution through a self-alignment method. CONSTITUTION:Ions are implanted while using patterns 27 formed onto the surface of a semi-insulating substrate 21 as masks, and an insulating film 26' is formed onto the whole surface of the substrate 21. The film 26' is bored by CF4 gas plasma while using patterns 28 formed after removing the patterns 27 as masks, and insulating-film patterns 26 are formed. Ions are implanted while employing the patterns 28 as masks, high-concentration impurity layers 22''' are shaped, and the patterns 28 are removed. Ions are implanted while using the patterns 29 and the patterns 26 formed as masks, and the operating layer 22' is formed. The patterns 29 are removed and annealing is executed, and a source electrode 23, a drain electrode 24 and a gate electrode 25 are prepared.

Inventors

• 👤 Toshiki Ehata
• 👤 敏樹 江畑
• 👤 Kenichi Kikuchi
• 👤 健一 菊地
• 👤 Hideki Hayashi
• 👤 秀樹 林

Bibliographic Details