Copper alloy for lead material of semiconductor device

Abstract

Abstract PURPOSE:To improve the bending workability and conductivity by a method wherein the lead material is formed of an alloy containing specified quantity of Cr, Sn and Cu. CONSTITUTION:The alloy for lead material comprises 0.03-0.2wt% of Cr, 0.03- 0.2wt% of Sn and residual of Cu. The strength and heat resistance of the alloy may be improved by means of adding Cr and Sn to Cu without remarkably degrading the conductivity and bending workability proper to Cu. Moreover, with 0.2wt% of P added, the strength and heat resistance of said alloy may be further improved. However, the content of Cr and Su exceeding respective upper limit remarkably degrades the conductivity of alloy while the content of P exceeding the upper limit thereof degrades both conductivity and workability of the alloy.

Inventors

• 👤 Kozo Yamato
• 👤 山戸　浩三
• 👤 Kiichi Akasaka
• 👤 赤坂　喜一
• 👤 Shigeo Shinozaki
• 👤 篠崎　重雄
• 👤 Taku Kuroyanagi
• 👤 黒柳　卓

Bibliographic Details