Field effect transistor and integrated circuit wherein it is used

Abstract

Abstract PURPOSE:To avoid the dependence of the gate threshold voltage of the field effect transistor on the impurity concentration of a second semiconductor and to implement a large scale integrated circuit readily by using the semiconductor having the low impurity density as a second semiconductor which is contacted with a first semiconductor constituting a channel forming region. CONSTITUTION:The semiconductor 13, which the first semiconductor constituting the channel forming region, is the compound semiconductor of GaAs and the like. The semiconductor 13 is an n type or p type and has low impurity concentration or it is highly pure semiconductor wherein impurities are hardly added. The semiconductor 13 is located on an insulating substrate 2. A semiconductor 14 has a large band gap than the semiconductor 13. It is the semiconductor which forms an excellent heterojunction with the semiconductor 13, and has the small impurity concentration different from the semiconductor 13. The thickness of the semiconductor 14 can be made sufficiently small in the range a tunnel currnet which exceeds a drain source current does not flow between the semiconductor 13 and a semiconductor 15. One example of the semiconductor 14 is GaxAl1-xAs when the semiconductor is made of GaAs.

Inventors

• 👤 Noburo Hashizume
• 👤 橋爪　信郎
• 👤 Yutaka Hayashi
• 👤 豊 林
• 👤 Mutsuro Ogura
• 👤 睦郎 小倉

Bibliographic Details