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JPS5791574A Expired / Lapsed JP ⏱️ 0.0 years remaining

Light emitting diode

Assignee: NEC Corp
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Filing: 1980-11-28
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Granted: —
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Expires: 2000-11-28
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Abstract

Abstract PURPOSE:To improve coupling efficiency with an optical fiber by a method wherein a protrusive or hollow shaped round region is provided at the main surface of a substrate and an reverse conductivity type current blocking layer is provided on the substrate except the round region in a light emitting diode of heterodyne structure. CONSTITUTION:After forming a P-InP layer 22 as a current blocking layer on an N-InP substrate 20, a round hollow 21 is provided at the layer 22 by using photoetching. An N-InP layer 23, active layers 24a, 24b and a P-InP layer 25, and a layer 26 are consecutively formed by liquid growth method. At that time, the active layers are grown by interruption through the round hollow and other regions. Therefore, the active layer 24a at the upper part of the round hollow is completely buried with InP. Most of the carriers are injected in the active layer 24a for recombination. Therefore, a light emitting diode of double heterodyne structure having stepped light intensity distribution can be obtained. In this way, coupling efficiency with an optical fiber can be improved.

Inventors

  • 👤 Mitsunori Sugimoto

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-26 11:18
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821

Claims Analysis

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References Cited (Backward Citations)

JPS51142281A Cited
JPS523392A Cited

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