Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a field insulating film having a large thickness in an arbitrary thickness without stepwise difference on the surface by etching the surface of a semiconductor substrate exposed between isolated insulating films and then oxidizing the field. CONSTITUTION:A narrow groove having a vertical side wall is formed with a mask of a resist film, a channel stopper region 34 is formed by the injection of boron, an insulating film is accumulated, and the groove is then buried. Thereafter, a silicon substrate 31 is exposed until the surface of the substrate 31 is exposed, and burying field insulating films 361-363 remain. Thereafter, an oxidation resistant film 38 is patterned with the resist film 39, the substrate 31 is etched, and a groove 40 is formed. Then, a P<+>-type region 41 is formed on the bottom of the groove, is oxidized in the field, and a field insulating film 42 having wide width is formed. Thus, the field insulating film having flat surface without bird beak can be formed.

Inventors

• 👤 Hiroshi Iwai

Bibliographic Details