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JPS5790967A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device sealed with resin

Assignee: NEC Corp
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Filing: 1980-11-27
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Granted: —
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Expires: 2000-11-27
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Abstract

Abstract PURPOSE:To decrease the thermal stress distortion of a molded transistor, and to improve reliability by a method wherein an element and an element joining material are fixed and coated with epoxy group resin, coated with an elastic rubbery or gelled material and sealed with resin. CONSTITUTION:The transistor chip 23 is attached onto a metallic plate 21 for radiation by the brazing material 22, an electrode on the chip is connected to an external lead 27, and the brazing material 22 and the chip 23 are coated with the epoxy group resin 28 at first and fixed. The whole surface of the resin 28 is coated with the rubbery or gelled precoat material 24, and lastly molded with the epoxy group or sillicon group sheath resin 25. Accordingly, stress distortion with thermal expansion and shrinkage through the intermittent conduction of the element can be relaxed while mechanical shock resistance can be improved, thus preventing the degradation of characteristics and the breakdown of the chip, then improving reliability.

Inventors

  • 👤 Masahiko Betsuyaku

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 15:58
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W74/121; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/07551; H10W72/50; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756

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